Impact of program/erase stress induced hole current on data retention degradation for MONOS memories

Author

Fujii, Shosuke ; Fujitsuka, Ryota ; Sekine, Katsuyuki ; Kusai, Haruka ; Sakuma, Kiwamu ; Koyama, Masato

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

2012

fDate

15-19 April 2012

Abstract

We investigate the mechanism for the data retention degradation caused by program/erase (P/E) cycling in MONOS memories, using the carrier separation measurement to identify the carrier type of Stress-Induced Leakage Current (SILC). It is thereby found that SILC is composed mainly of holes for the MONOS with less Si-rich SiN layer (hole SILC). A clear correlation is also discovered between hole SILC and interface states generated during P/E cycle. We also discuss the mechanism of the degradation by hole SILC of the data retention characteristics of MONOS devices.

Keywords

leakage currents; random-access storage; silicon compounds; MONOS device; MONOS memories; Si-rich SiN layer; SiN; carrier separation measurement; data retention degradation; hole SILC; interface state; program-erase cycling; program-erase stress induced hole current; stress-induced leakage current; Charge carrier processes; Degradation; Interface states; MONOS devices; Photonic band gap; Silicon; Silicon compounds; Charge-separation; Cycling degradation; Data Retention; Hole current; MONOS; SILC; TANOS; recombination; trap-detrap;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241772

Filename

6241772