DocumentCode :
2633044
Title :
A novel tri-state driver to improve the switching performance in automotive converter
Author :
Utz, Sebastian ; Hackner, Thomas ; Pforr, Johannes
Author_Institution :
Univ. of Appl. Sci. Ingolstadt, Ingolstadt, Germany
fYear :
2010
fDate :
6-8 Sept. 2010
Abstract :
A novel low cost tri-state driver is presented to reduce the overvoltage of the synchronous MOSFET in an automotive dc-dc converter. A third high-impedance state allows the MOSFET to be driven in the linear mode for a few nano seconds. The reverse recovery current of the body diode is therefore diverted and does not charge the junction capacitance. This leads to a reduced voltage stress of the MOSFET and an improved EMI behavior of the converter. The value of the overvoltage can be controlled with a simple voltage source in the gate circuit. An analysis has been done to predict the overvoltage dependent on the voltage of this voltage source. Prototypes with different MOSFETs were built and tested to prove theoretical predictions. The additional power losses caused by the operation in the linear mode are small in this application.
Keywords :
DC-DC power convertors; MOSFET; driver circuits; electromagnetic interference; automotive converter; automotive dc-dc converter; linear mode; power loss; reduced voltage stress; switching performance; synchronous MOSFET; tri-state driver; Capacitance; FETs; Inductance; Logic gates; MOSFET circuits; Synchronization; Voltage control; Cdv/dt; EMI reduction; MOSFET; overvoltage protection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Motion Control Conference (EPE/PEMC), 2010 14th International
Conference_Location :
Ohrid
Print_ISBN :
978-1-4244-7856-9
Type :
conf
DOI :
10.1109/EPEPEMC.2010.5606869
Filename :
5606869
Link To Document :
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