Title :
InGaAs/InP MOS device for single photon detection, amplification, and wavelength conversion
Author :
Kang, Yimin ; Zhao, Kai ; Yu-Hwa, Lo
Abstract :
In this paper, a unique device is proposed to detect single IR photons from low efficiency sources and to convert a single-photon signal into a much stronger optical signal at a wavelength easily detectable by a Si CCD or CMOS sensor. The three functions: single photon detection, signal amplification, and wavelength conversion, are integrated in one device. This could pave the way for optical interconnect without dedicated high efficiency light sources such as lasers or LEDs
Keywords :
CCD image sensors; CMOS image sensors; III-V semiconductors; charge-coupled devices; gallium arsenide; indium compounds; infrared detectors; optical interconnections; optical wavelength conversion; CCD sensor; CMOS sensor; InGaAs-InP; InGaAs/InP MOS device; optical interconnect; signal amplification; single photon detection; wavelength conversion; Indium gallium arsenide; Indium phosphide; Infrared detectors; MOS devices; Optical interconnections; Optical sensors; Optical wavelength conversion; Optoelectronic and photonic sensors; Stimulated emission; Wavelength conversion;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548031
