Title :
Low noise avalanche photodiodes
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield
Abstract :
This work reports on the simulation of the multiplication and excess noise in a 0.2 mum thick InP multiplication region with a 1.5 mum InGaAs absorption region. The effect of ionization in InGaAs appears to make very little difference to the multiplication and noise characteristics
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor device models; semiconductor device noise; 0.2 mum; InGaAs; InP; avalanche photodiodes; ionization; multiplication; noise; Absorption; Avalanche photodiodes; Electrons; Impact ionization; Indium gallium arsenide; Indium phosphide; Noise measurement; Noise reduction; Particle scattering; Signal to noise ratio;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548032
