DocumentCode
2633080
Title
Low noise avalanche photodiodes
Author
David, J.P.R.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield
fYear
2005
fDate
22-22 Oct. 2005
Firstpage
369
Lastpage
370
Abstract
This work reports on the simulation of the multiplication and excess noise in a 0.2 mum thick InP multiplication region with a 1.5 mum InGaAs absorption region. The effect of ionization in InGaAs appears to make very little difference to the multiplication and noise characteristics
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor device models; semiconductor device noise; 0.2 mum; InGaAs; InP; avalanche photodiodes; ionization; multiplication; noise; Absorption; Avalanche photodiodes; Electrons; Impact ionization; Indium gallium arsenide; Indium phosphide; Noise measurement; Noise reduction; Particle scattering; Signal to noise ratio;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548032
Filename
1548032
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