Title :
Ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes
Author :
Guo, Xiangyi ; Rowland, Larry B. ; Dunne, Greg T. ; Fronheiser, Jody A. ; Sandvik, Peter M. ; Beck, Ariane L. ; Campbell, Joe C.
Author_Institution :
Texas Univ., Austin, TX
Abstract :
We report separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm corresponding to unity gain after reach-through was achieved. Gain higher than 1000 was demonstrated without edge breakdown
Keywords :
avalanche photodiodes; silicon compounds; wide band gap semiconductors; 278 nm; 4H-SiC avalanche photodiodes; 83 percent; SiC; external quantum efficiency; separate absorption and multiplication; Avalanche photodiodes; Dark current; Doping; Electromagnetic wave absorption; Epitaxial layers; Gain measurement; Gold; Photoconductivity; Substrates; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548034
