Title :
Oxidation smoothing of sidewall roughness in AlGaAs heterostructure waveguides
Author :
Liang, Di ; Hall, Douglas C. ; Peake, Gregory M.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN
Abstract :
A 10-100 fold reduction in sidewall roughness of etched AlGaAs ridge structures is demonstrated using a wet thermal oxidation process modified through addition of <1% O2 to the N2 carrier gas, potentially enabling high index contrast waveguides with ultra-low scattering loss for ring resonator and other photonics device applications
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; integrated optics; light scattering; optical losses; optical resonators; optical waveguides; oxidation; surface roughness; 10-100 fold reduction; AlGaAs; AlGaAs ridge structures; AlGaAs waveguides; N2 carrier gas; etching; heterostructure waveguides; high index contrast waveguides; oxidation smoothing; photonics device applications; ring resonator; sidewall roughness; ultralow scattering loss; wet thermal oxidation; Dry etching; Electromagnetic scattering; Optical losses; Optical ring resonators; Oxidation; Particle scattering; Propagation losses; Semiconductor waveguides; Smoothing methods; Wet etching;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548038
