Title :
Long duration high temperature storage test on GaN HEMTs
Author :
Vitobello, F. ; Barnes, A.R.
Author_Institution :
Product Assurance & Safety Dept., Eur. Space Agency, Noordwijk, Netherlands
Abstract :
As part of a large reliability test campaign, a long duration high temperature storage test has been performed on GaN HEMTs to identify diffusion or contact related failure mechanisms. The storage test has been performed for 7000 hours and 17000 hours at 330°C and 275°C respectively and the changes in electrical and physical properties analyzed.
Keywords :
failure analysis; gallium compounds; high electron mobility transistors; high-temperature effects; semiconductor device reliability; semiconductor device testing; wide band gap semiconductors; HEMT; contact related failure mechanisms; diffusion related failure mechanisms; electrical property; high temperature storage test; physical property; reliability test campaign; temperature 275 C; temperature 330 C; time 17000 hour; time 7000 hour; Degradation; Gallium nitride; Logic gates; Performance evaluation; Schottky diodes; Stress; Temperature measurement; GaN; HEMTs; reliability; storage test;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241781
