1.3-/spl mu/m InGaAs vertical-cavity surface-emitting lasers

Author

Hammara, M. ; Marcks, R. ; von Wurtemberg, R.M. ; Sundgren, P. ; Berggren, Jesper ; Larsson, A. ; Soderberg, E. ; Modh, P. ; Gustavsson, Johan ; Ghisoni, M. ; Chitica, N.

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista

fYear

2005

fDate

22-22 Oct. 2005

Firstpage

396

Lastpage

397

Abstract

We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-mum range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140degC and 10 Gbit/s data transmission

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser tuning; optical fibre communication; quantum well lasers; surface emitting lasers; 1.3 mum; 10 Gbit/s; 1300 nm; 140 degC; InGaAs lasers; InGaAs-GaAs; continuous-wave operation; data transmission; laser emission; negative gain-cavity tuning; quantum-well growth; singlemode output power; threshold currents; vertical-cavity surface-emitting lasers; Data communication; Gallium arsenide; Indium gallium arsenide; Laser tuning; Optical device fabrication; Power generation; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548045

Filename

1548045