DocumentCode
2633279
Title
1.3-μm GaInNAs VCSELs for 40-Gb/s CWDM systems
Author
Yamada, M. ; Anan, T. ; Hatakeyama, H. ; Tokutome, K. ; Suzuki, N. ; Nido, M. ; Tsuji, M. ; Nishi, K. ; Nakamura, T.
Author_Institution
NEC Corp., Shiga, Japan
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
398
Lastpage
399
Abstract
This paper reports on the performance of the four-wavelength 10-Gb/s GaInNAs VCSELs for a 40-Gb/s CWDM system. WDM transmission characteristics using a optical multiplexer and a demultiplexer including dielectric thin film filters is also demonstrated.
Keywords
III-V semiconductors; demultiplexing equipment; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; multiplexing equipment; optical communication equipment; optical fibre communication; optical filters; semiconductor lasers; surface emitting lasers; thin film devices; wavelength division multiplexing; 1.3 mum; 10 Gbit/s; 40 Gbit/s; CWDM systems; GaInNAs; GaInNAs VCSEL; WDM transmission; demultiplexer; dielectric thin film filters; four-wavelength VCSEL; optical multiplexer; Costs; Epitaxial growth; Gallium arsenide; National electric code; Nitrogen; Optical fiber networks; Optical filters; Temperature control; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548046
Filename
1548046
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