Title :
Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 μm quantum dot lasers
Author :
Marko, I.P. ; Masse, N. ; Sweeney, S.J. ; Adams, A.R. ; Sellers, I.R. ; Mowbray, D.J. ; Skolnick, M.S. ; Liu, H.Y. ; Groom, K.M.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., UK
Abstract :
Gain saturation increases the radiative component, Jrad, of the threshold current density, Jth, and its contribution to the thermal sensitivity of Jth in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical saturation; quantum dot lasers; thermo-optical effects; 1.3 mum; InAs-GaAs; InAs/GaAs lasers; gain saturation; low QD density devices; nonradiative recombination; quantum dot lasers; radiative component; short cavity devices; thermal characteristics; thermal sensitivity; threshold current density; Density measurement; Gallium arsenide; Land surface temperature; Quantum dot lasers; Quantum well lasers; Radiative recombination; Space technology; Temperature sensors; Thermal engineering; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548048
