• DocumentCode
    2633381
  • Title

    Structures and vibration analysis of film bulk acoustic wave resonators

  • Author

    Wang, Ji ; Liu, Jian-song ; Du, Jian-ke ; Huang, De-jin

  • Author_Institution
    Sch. of Eng., Ningbo Univ., Ningbo
  • fYear
    2008
  • fDate
    5-8 Dec. 2008
  • Firstpage
    78
  • Lastpage
    86
  • Abstract
    The wireless communication technology demands for smaller size, high frequency, high performance, low energy consumption, and low cost RF components. Current products based on dielectric or SAW resonators are not enough either due to the size or the circuit loss. Film bulk acoustic resonators (FBAR) are the latest technology offering small size and high frequency RF components to the fast growing personal wireless communication technology. We reviewed the current state-of-art of the FBAR technology and explained the working mechanism of FBAR. With two major vibration models, thickness-extension and thickness-shear, we also described the FBAR structure and principle of material selection. Furthermore, we analyzed the effect of electrodes on the vibration frequency, and explained the choice of quarter wavelength reflectors in the SMR. We want to provide essential concepts and knowledge about FBAR technology to engineers who are interested in studying it further. With enough knowledge on the vibration models and materials, the design method of FBAR and SMAR can be established with accurate analysis.
  • Keywords
    acoustic resonators; bulk acoustic wave devices; dielectric thin films; vibrations; bulk acoustic wave resonators; film; structures; thickness extension; thickness shear; vibration analysis; vibration frequency; Acoustic waves; Circuits; Communications technology; Costs; Dielectric losses; Energy consumption; Film bulk acoustic resonators; Radio frequency; Surface acoustic waves; Wireless communication; FBAR; Film; SMR; acoustics; frequency; piezoelectric; resonator; vibrations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Piezoelectricity, Acoustic Waves, and Device Applications, 2008. SPAWDA 2008. Symposium on
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-2891-5
  • Type

    conf

  • DOI
    10.1109/SPAWDA.2008.4775753
  • Filename
    4775753