Title :
High Power Microstrip RF Switches
Author :
Choi, Soon D. ; Boreham, James F.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A microstrip-type SPDT switch, using only two PIN diodes and eliminating usual dc blocking capacitors, has demonstrated an RF power handling capacity greater than 100 W CW at S-band. The insertion loss is less than 0.25 dB and the input-to-off port isolation is greater than 36 dB over a bandwidth larger than 30 MHz.
Keywords :
microstrip circuits; p-i-n diodes; switches; PIN diodes; high-power microstrip RF switches; microstrip-type SPDT switch; power handling capacity; Capacitors; Diodes; Impedance; Inductance; Insertion loss; Microstrip; Power transmission lines; Radio frequency; Switches; Switching circuits;
Conference_Titel :
Microwave Symposium, 1972 IEEE GMTT International
Conference_Location :
Arlington Heights, IL
DOI :
10.1109/GMTT.1972.1122990
