Title :
High Burnout Gallium Arsenide Schottky Barrier Diodes
Author :
Oxley, T.H. ; Swallow, G.H. ; Hansom, A.
Author_Institution :
Semicond. Res. Labs., Gen. Electr. Co. Ltd., Wembley, UK
Abstract :
This paper discusses the results of a programme to investigate the burnout phenomena of gallium arsenide Schottky barrier mixer diodes with regard to radar system t.r. cell leakage, and describes the performance of X-band high burnout diodes.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diode mixers; gallium arsenide; radar applications; GaAs; X-band high burnout diodes; cell leakage; high-burnout gallium arsenide Schottky barrier diodes; mixer diodes; radar system; Contacts; Electromagnetic heating; Gallium arsenide; Gold; Microwave devices; Noise figure; Schottky barriers; Schottky diodes; Semiconductor diodes; Testing;
Conference_Titel :
Microwave Symposium, 1972 IEEE GMTT International
Conference_Location :
Arlington Heights, IL
DOI :
10.1109/GMTT.1972.1122992
