DocumentCode
2633613
Title
High Burnout Gallium Arsenide Schottky Barrier Diodes
Author
Oxley, T.H. ; Swallow, G.H. ; Hansom, A.
Author_Institution
Semicond. Res. Labs., Gen. Electr. Co. Ltd., Wembley, UK
fYear
1972
fDate
22-24 May 1972
Firstpage
58
Lastpage
60
Abstract
This paper discusses the results of a programme to investigate the burnout phenomena of gallium arsenide Schottky barrier mixer diodes with regard to radar system t.r. cell leakage, and describes the performance of X-band high burnout diodes.
Keywords
III-V semiconductors; Schottky barriers; Schottky diode mixers; gallium arsenide; radar applications; GaAs; X-band high burnout diodes; cell leakage; high-burnout gallium arsenide Schottky barrier diodes; mixer diodes; radar system; Contacts; Electromagnetic heating; Gallium arsenide; Gold; Microwave devices; Noise figure; Schottky barriers; Schottky diodes; Semiconductor diodes; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1972 IEEE GMTT International
Conference_Location
Arlington Heights, IL
Type
conf
DOI
10.1109/GMTT.1972.1122992
Filename
1122992
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