Title :
High-speed high-current InGaAs/InP photodiode with thick depletion region
Author :
Duan, Ning ; Li, Ning ; Demiguel, Stephane ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Microelectron. Res. Center, Texas Univ., Austin, TX
Abstract :
We report InGaAs/InP uni-traveling-carrier photodiodes with thick depletion region with RF output power of 19 dBm at 25 GHz and 25 dBm at 5.5 GHz
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical receivers; photodetectors; photodiodes; 25 GHz; 5.5 GHz; InGaAs-InP; InGaAs/InP photodiode; depletion region; unitraveling-carrier photodiodes; Bandwidth; Indium gallium arsenide; Indium phosphide; Optical films; Photodetectors; Photodiodes; Power generation; Radio frequency; Space charge; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548068
