Title :
Alpha-induced soft errors in Floating Gate flash memories
Author :
Bagatin, M. ; Gerardin, S. ; Paccagnella, A. ; Ferlet-Cavrois, V.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
Abstract :
We study the sensitivity to alpha particles of state-of-the-art Multi-Level Cell (MLC) and Single-Level Cell (SLC) NAND Floating Gate (FG) flash memories with NAND architecture. We show that starting from a feature size of 50 nm, MLC flash memories are sensitive to alpha particles, whereas SLC devices do not show any sensitivity down to a feature size of 34 nm. We calculate the alpha-induced soft error rates on the field, discuss technology trends in comparison to heavy-ions.
Keywords :
NAND circuits; flash memories; NAND architecture; alpha particle; alpha-induced soft error rate; floating gate flash memories; multilevel cell; single-level cell NAND; size 34 nm; size 50 nm; Alpha particles; Flash memory; Ions; Neutrons; Nonvolatile memory; Radiation effects; Sensitivity; Alpha Particles; Error Correction Codes; Floating-gate Cells; Soft Errors;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241811
