DocumentCode
2633828
Title
GaN power device and reliability for automotive applications
Author
Kachi, Tetsu ; Kikuta, Daigo ; Uesugi, Tsutomu
Author_Institution
Toyota Central R&D Labs., Inc., Nagakute, Japan
fYear
2012
fDate
15-19 April 2012
Abstract
Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV) systems. For future development of the HV/EV, higher performances than Si power device, for example, low on-resistance, high speed, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Present status of the GaN power device development is presented. Reliability of the GaN power device was also discussed.
Keywords
III-V semiconductors; automotive electronics; gallium compounds; hybrid electric vehicles; power semiconductor switches; semiconductor device reliability; wide band gap semiconductors; GaN; automotive applications; hybrid electric vehicle; power device; power switching devices; reliability; Films; Gallium nitride; Insulators; Logic gates; Performance evaluation; Reliability; Silicon; AlGaN/GaN; Avalanche resistance; EV; HV; Lateral device; Power device; Vertical device; gate insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4577-1678-2
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2012.6241815
Filename
6241815
Link To Document