DocumentCode :
2633885
Title :
Effects of channel hot carrier stress on III–V bulk planar MOSFETs
Author :
Wrachien, N. ; Cester, A. ; Bari, D. ; Zanoni, E. ; Meneghesso, G. ; Wu, Y.Q. ; Ye, P.D.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
fYear :
2012
fDate :
15-19 April 2012
Abstract :
We performed channel hot carrier stress on enhancement-mode, inversion-type III-V MOSFETs with Al2O3 gate dielectric. The stress induces subthreshold swing degradation, increase on the threshold voltage and reduction of drain saturation current. Nonetheless, no appreciable transconductance degradation can be observed at least with a stress time as long as 105 s.
Keywords :
III-V semiconductors; MOSFET; alumina; dielectric materials; hot carriers; Al2O3; channel hot carrier stress; drain saturation current reduction; enhancement mode; gate dielectric; inversion type III-V bulk planar MOSFET; subthreshold swing degradation; threshold voltage; Current measurement; Degradation; Dielectrics; Electric breakdown; Logic gates; MOSFETs; Stress; Hot Carrier Stress; III–V MOSFET; reliability; stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2012.6241818
Filename :
6241818
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2633885
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