DocumentCode
2633998
Title
NEMS based logic and memory circuits
Author
Jae Eun Jang ; Amaratunga, G.A.J.
Author_Institution
Dept. of Inf. & Commun. Eng., Daegu Gyeongbuk Inst. of Sci. & Technol. (DGIST), Daegu, South Korea
fYear
2012
fDate
15-19 April 2012
Abstract
Carbon nanotube (CNT) based nano electromechanical system (NEMS) were developed to apply to the logic and the memory circuit. The electrical `on-off´ behavior induced by the mechanical movements of CNTs can promise low power consumption in circuit with very low level leakage current. Additionally, the unique vertical structure of nanotubes allows high integration density for devices.
Keywords
carbon nanotubes; leakage currents; logic circuits; nanoelectromechanical devices; storage management chips; C; CNT; NEMS based logic circuits; carbon nanotube; low level leakage current; low power consumption; memory circuits; nanoelectromechanical system; Capacitors; Electrodes; Force; Leakage current; Logic gates; Nickel; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4577-1678-2
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2012.6241823
Filename
6241823
Link To Document