• DocumentCode
    2634022
  • Title

    Building A Realistic Model For Magnetoresistive Random Access Memory

  • Author

    Vavra, W. ; Gadbois, J. ; Jian-Gang Zhu ; Hurst, A.

  • Author_Institution
    Honeywell Inc
  • fYear
    1997
  • fDate
    1-4 April 1997
  • Keywords
    Anisotropic magnetoresistance; Finite element methods; Giant magnetoresistance; Magnetic anisotropy; Magnetic fields; Magnetic materials; Maxwell equations; Micromagnetics; Perpendicular magnetic anisotropy; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 1997. Digests of INTERMAG '97., 1997 IEEE International
  • Conference_Location
    New Orleans, LA, USA
  • Print_ISBN
    0-7803-3862-6
  • Type

    conf

  • DOI
    10.1109/INTMAG.1997.597563
  • Filename
    597563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2634022