Title :
Building A Realistic Model For Magnetoresistive Random Access Memory
Author :
Vavra, W. ; Gadbois, J. ; Jian-Gang Zhu ; Hurst, A.
Author_Institution :
Honeywell Inc
Keywords :
Anisotropic magnetoresistance; Finite element methods; Giant magnetoresistance; Magnetic anisotropy; Magnetic fields; Magnetic materials; Maxwell equations; Micromagnetics; Perpendicular magnetic anisotropy; Random access memory;
Conference_Titel :
Magnetics Conference, 1997. Digests of INTERMAG '97., 1997 IEEE International
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-3862-6
DOI :
10.1109/INTMAG.1997.597563