DocumentCode :
2634022
Title :
Building A Realistic Model For Magnetoresistive Random Access Memory
Author :
Vavra, W. ; Gadbois, J. ; Jian-Gang Zhu ; Hurst, A.
Author_Institution :
Honeywell Inc
fYear :
1997
fDate :
1-4 April 1997
Keywords :
Anisotropic magnetoresistance; Finite element methods; Giant magnetoresistance; Magnetic anisotropy; Magnetic fields; Magnetic materials; Maxwell equations; Micromagnetics; Perpendicular magnetic anisotropy; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 1997. Digests of INTERMAG '97., 1997 IEEE International
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-3862-6
Type :
conf
DOI :
10.1109/INTMAG.1997.597563
Filename :
597563
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2634022
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