DocumentCode :
2634158
Title :
Study of structural fabrication process of Film Bulk Acoustic Resonator (FBAR)
Author :
HUANG, Guang-jun ; Shi, Yu ; YANG, Jie ; ZHAO, Bao-lin ; ZHONG, Hui
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu
fYear :
2008
fDate :
5-8 Dec. 2008
Firstpage :
304
Lastpage :
308
Abstract :
Thin film bulk acoustic resonator, grown based on the MEMS fabrication technology simultaneously, has become one of the most positive devices within the area of wireless communication application. FBAR has such distinct advantages as higher frequency, smaller volume, better power handling capabilities, higher Q-values and well compatibility with IC techniques. The paper briefly introduces the operational principle of FBAR, and then discusses the detailed characters and structural fabrication processes of three kinds of FBAR. The mainly package technology of FBAR will also be described.
Keywords :
acoustic resonators; micromechanical resonators; thin film devices; MEMS; power handling; structural fabrication; thin film bulk acoustic resonator; wireless communication; Acoustic applications; Acoustic devices; Chip scale packaging; Fabrication; Film bulk acoustic resonators; Laboratories; Micromechanical devices; Personal communication networks; Thin film devices; Wireless communication; Bulk acoustic; FBAR; MEMS; SMR; packaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Piezoelectricity, Acoustic Waves, and Device Applications, 2008. SPAWDA 2008. Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-2891-5
Type :
conf
DOI :
10.1109/SPAWDA.2008.4775797
Filename :
4775797
Link To Document :
بازگشت