DocumentCode :
2634202
Title :
Effect Of Crystalline Anisotropy In Magnetoresistive Random Access Memory Cells
Author :
Gadbois, J.B. ; Zhu, J-G.
Author_Institution :
University of Minnesota,
fYear :
1997
fDate :
1-4 April 1997
Keywords :
Anisotropic magnetoresistance; Crystalline materials; Crystallization; Magnetic anisotropy; Magnetic materials; Magnetization; Magnetostatics; Perpendicular magnetic anisotropy; Random access memory; Stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 1997. Digests of INTERMAG '97., 1997 IEEE International
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-3862-6
Type :
conf
DOI :
10.1109/INTMAG.1997.597564
Filename :
597564
Link To Document :
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