Title :
Parasitic bipolar effects on soft errors to prevent simultaneous flips of redundant flip-flops
Author :
Zhang, Kuiyuan ; Yamamoto, Ryosuke ; Furuta, Jun ; Kobayashi, Kazutoshi ; Onodera, Hidetoshi
Author_Institution :
Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
Parasitic bipolar effects are intentionally used to prevent a simultaneous flip of redundant FFs, which make them more fault-resilient to soft errors. Device simulations reveal that a simultaneous flip of redundant latches is suppressed by storing the opposite values instead of storing the same value due to its asymmetrical structure. The state of latches always becomes a specific value after a particle hit due to the bipolar effects. Spallation neutron irradiation proves that no MCU is observed in the D-FF arrays in which the stored values of latches are equivalent to the specific value. The redundant latch structure storing the opposite values is robust to the simultaneous flip.
Keywords :
flip-flops; integrated circuit reliability; neutron effects; radiation hardening (electronics); redundancy; Parasitic bipolar effects; particle hit; redundant flip-flops; redundant latch; simultaneous flip prevention; soft errors; spallation neutron irradiation; Integrated circuit modeling; Inverters; Latches; MOS devices; Neutrons; Radiation effects; Tunneling magnetoresistance;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241844