DocumentCode :
2634396
Title :
Mitigation technique against multi-bit-upset without area, performance and power overhead
Author :
Uemura, Taiki ; Tanabe, Ryo ; Matusyama, Hideya
Author_Institution :
Fujitsu Semicond. Ltd., Tokyo, Japan
fYear :
2012
fDate :
15-19 April 2012
Abstract :
In this work, we propose a technique for mitigating multi-bit-upset (MBU) which cannot be corrected by Error-Correction-Code (ECC) with using bit-line alternation and narrow deep-N-well. This technique mitigates MBU without area, performance and power overhead. The mitigation efficiency is evaluated with alpha and neutron acceleration experiments. The experimental results show excellent mitigation efficiency of the proposed technique.
Keywords :
SRAM chips; error correction codes; ECC; MBU mitigation; SRAM; bit-line alternation; error-correction-code; multibit-upset mitigation techniques; narrow deep-N-well; neutron acceleration; Acceleration; Error correction codes; Neutrons; Particle beams; Power demand; Random access memory; Sea level; ECC; MBU; Mitigation; SRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2012.6241846
Filename :
6241846
Link To Document :
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