DocumentCode :
2634421
Title :
Microwave Transistors, Bipolar and Field Effect -Today and Tommorrow
Author :
Kakihana, Sanehiko
Author_Institution :
Hewlett Packard Co., Palo Alto, CA, USA
fYear :
1972
fDate :
22-24 May 1972
Firstpage :
170
Lastpage :
172
Abstract :
The state-of-the-art low noise and high power microwave transistors of both bipolar and field effect types are reviewed. The analyses are made to determine the future potentials of bipolar and field effect transistors in microwave applications. It appears that the bipolar transistor is approaching old age both as low noise and high power devices, but field effect transistors show increasing promise in both applications. The trend for monolithic integration of maturing bipolar devices is also discussed.
Keywords :
microwave bipolar transistors; microwave field effect transistors; low-noise high-power microwave transistors; microwave bipolar transistors; microwave field effect transistors; monolithic integration; Bipolar transistors; Circuit noise; MESFETs; Microwave FETs; Microwave devices; Microwave transistors; Noise figure; Power transistors; Silicon; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 1972 IEEE GMTT International
Conference_Location :
Arlington Heights, IL
Type :
conf
DOI :
10.1109/GMTT.1972.1123035
Filename :
1123035
Link To Document :
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