Gate dielectric TDDB characterizations of advanced High-k and metal-gate CMOS logic transistor technology

Author

Pae, Sung-il ; Prasad, C. ; Ramey, S. ; Thomas, Julian ; Rahman, Aminur ; Lu, R. ; Hicks, J. ; Batzer, S. ; Zhao, Qiming ; Hatfield, J. ; Liu, Minggang ; Parker, Christopher ; Woolery, B.

Author_Institution

Q&R, Intel Corp., Ltd., Hillsboro, OR, USA

fYear

2012

fDate

15-19 April 2012

Abstract

Transition into High-K (HK) dielectric and Metal-Gate (MG) in advanced logic process has enabled continued technology scaling in support of Moore´s law [1-2]. With this, CMOS operating fields have been increasing along with gate dielectric TDDB voltage acceleration factors (VAF). VAF is the most critical reliability parameter used to accurately predict the Gate oxide lifetime (TDDB) at use. This paper highlights low voltage (low-V) TDDB data is critical for the accurate assessment of HK+MG VAF and provides further evidences from both transistor- and product-level data based on 32nm technology generations.

Keywords

CMOS integrated circuits; high-k dielectric thin films; integrated circuit reliability; transistors; Moore law; VAF; critical reliability parameter; gate dielectric TDDB characterization; gate oxide lifetime; high-k CMOS logic transistor technology; high-k dielectric; low voltage TDDB data; metal-gate CMOS logic transistor technology; product-level data; size 32 nm; transistor-level data; voltage acceleration factor; Dielectrics; Extrapolation; High K dielectric materials; Logic gates; MOS devices; Reliability; Stress; 32nm technology; TDDB; high-k and metal-gate reliability; high-k dielectrics;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241848

Filename

6241848