Title :
A 22 Percent C.W. Efficiency Solid State Microwave Oscillator
Author :
Kramer, B. ; Farrayre, A. ; Hollan, L. ; Constant, E. ; Salmer, G.
Author_Institution :
Labs. d´´Electron. et de Phys. Appl., Limeil-Brevannes, France
Abstract :
Operation of GaAs Schottky-barrier IMPATT diodes is reported. We describe the technology, the electrical characterization and the microwave coaxial measurements. Efficiencies of 22% at 6.5 GHz and 18.5 % at 12 GHz were obtained. Computer calculations indicate that the efficiency of these devices may be considerably higher.
Keywords :
III-V semiconductors; IMPATT diodes; Schottky diodes; gallium arsenide; microwave measurement; microwave oscillators; CW efficiency; GaAs; GaAs Schottky-barrier IMPATT diodes; efficiency 18.5 percent; efficiency 22 percent; frequency 12 GHz; frequency 6.5 GHz; microwave coaxial measurements; solid state microwave oscillator; Electric breakdown; Electrical resistance measurement; Gold; Microwave oscillators; Packaging; Power generation; Power harmonic filters; Schottky diodes; Solid state circuits; Thermal resistance;
Conference_Titel :
Microwave Symposium, 1972 IEEE GMTT International
Conference_Location :
Arlington Heights, IL
DOI :
10.1109/GMTT.1972.1123041
