Title :
New insights into SILC-based life time extraction
Author :
Young, C.D. ; Bersuker, G. ; Jo, M. ; Matthews, K. ; Huang, J. ; Deora, S. ; Ang, K. -W ; Ngai, T. ; Hobbs, C. ; Kirsch, P.D. ; Padovani, A. ; Larcher, L.
Author_Institution :
SEMATECH, Albany, NY, USA
Abstract :
The breakdown (TDDB/SILC) characteristics of nMOS transistors with hafnium-based gate dielectric stacks of various zirconium content were investigated. It is found that the gate stack composition affects the SILC-voltage dependency while the voltage value chosen for SILC monitoring impacts significantly the SILC-based lifetime projection. For the worst case lifetime evaluation, SILC should be monitored at its maximum value rather than at any pre-defined, fixed voltage.
Keywords :
MOSFET; electric breakdown; hafnium; leakage currents; semiconductor device reliability; zirconium; Hf; SILC monitoring impacts; SILC-based life time extraction; SILC-based lifetime projection; SILC-voltage dependency; TDDB-SILC characteristics; Zr; gate stack composition; hafnium-based gate dielectric stacks; lifetime evaluation; nMOS transistors; stress-induced leakage current; time dependent dielectric breakdown; Dielectrics; Electric breakdown; Hafnium compounds; Logic gates; Monitoring; Stress; Zirconium; Hafnium; High-k; Zirconium; breakdown; degradation; reliability; stress-induced leakage current (SILC); time dependent dielectric breakdown (TDDB);
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241854
