Geometry, kinetics, and short length effects of electromigration in Mn doped Cu interconnects at the 32nm technology node

Author

Christiansen, Cathryn ; Li, Baozhen ; Angyal, Matthew ; Kane, Terence ; McGahay, Vincent ; Wang, Yun Yu ; Yao, Shaoning

Author_Institution

Syst. & Technol. Group, IBM, Essex Junction, VT, USA

fYear

2012

fDate

15-19 April 2012

Abstract

Mn doping in Cu seed has been used to improve EM performance at the 32nm technology node. This paper will show that on an optimized process with CuMn there were different degrees of EM enhancement for geometric variations including line width and electron flow direction. In addition, kinetics experiments on several geometries resulted in activation energies in the range of 0.95-1.33eV. Finally, the Blech threshold (jL)c=338mA/um was derived from the experimental data on various line lengths and current densities.

Keywords

copper alloys; electromigration; integrated circuit interconnections; semiconductor doping; Cu:Mn; doping; electromigration; geometry; integrated circuit interconnects; kinetics; short length effects; Current density; Electromigration; Geometry; Integrated circuit interconnections; Kinetic theory; Manganese; Stress; CuMn; electromigration; line; short length; via;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241856

Filename

6241856