Title :
Geometry, kinetics, and short length effects of electromigration in Mn doped Cu interconnects at the 32nm technology node
Author :
Christiansen, Cathryn ; Li, Baozhen ; Angyal, Matthew ; Kane, Terence ; McGahay, Vincent ; Wang, Yun Yu ; Yao, Shaoning
Author_Institution :
Syst. & Technol. Group, IBM, Essex Junction, VT, USA
Abstract :
Mn doping in Cu seed has been used to improve EM performance at the 32nm technology node. This paper will show that on an optimized process with CuMn there were different degrees of EM enhancement for geometric variations including line width and electron flow direction. In addition, kinetics experiments on several geometries resulted in activation energies in the range of 0.95-1.33eV. Finally, the Blech threshold (jL)c=338mA/um was derived from the experimental data on various line lengths and current densities.
Keywords :
copper alloys; electromigration; integrated circuit interconnections; semiconductor doping; Cu:Mn; doping; electromigration; geometry; integrated circuit interconnects; kinetics; short length effects; Current density; Electromigration; Geometry; Integrated circuit interconnections; Kinetic theory; Manganese; Stress; CuMn; electromigration; line; short length; via;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241856
