Title :
Semiconductor quantum dot micropillar cavities for quantum electrodynamic experiments
Author :
Löffler, A. ; Hofmann, C. ; Reitzenstein, S. ; Kamp, M. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Physik, Wurzburg Univ.
Abstract :
A high-Q vertical emitting AlAs/GaAs Fabry-Perot micropillar cavities are fabricated, with a new type of GaInAs quantum dots within a one lambda-cavity using high reflectivity distributed Bragg reflectors. In this paper, micropillars with a maximum quality factor of up to 34500 for a 4 mum wide microcavity are presented
Keywords :
III-V semiconductors; Q-factor; aluminium compounds; distributed Bragg reflectors; excitons; gallium arsenide; microcavities; quantum electrodynamics; reflectivity; semiconductor quantum dots; AlAs-GaAs; GaInAs quantum dots; distributed Bragg reflectors; microcavity; quality factor; quantum electrodynamic; reflectivity; semiconductor quantum dot micropillar cavities; vertical emitting AlAs/GaAs Fabry-Perot micropillar cavities; Distributed Bragg reflectors; Electrodynamics; Etching; Excitons; Gallium arsenide; Microcavities; Oscillators; Q factor; Quantum dots; Resonance;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548112
