Effect of wave function modulation on high frequency response characteristics of GaAs/AlAs quantum wells

The effect of wave function modulation on the high frequency response of GaAs/AlAs quantum wells with several thin barrier layers being inserted inside the well is studied. Carrier scattering by longitudinal optic phonons, deformation potential acoustic phonons and background-ionized impurities are considered. The wave function modulation induced inside the quantum wells is found to reduce the intersubband scattering strength and considerably enhance the ac mobility normalized by the dc mobility. The variation of the normalized ac mobility with the frequency of the applied field is found to be fairly constant up to certain frequency beyond which it drops down.