Effect of wave function modulation on high frequency response characteristics of GaAs/AlAs quantum wells

Author

Karmakar, Anupam ; Biswas, Anup Kumar ; Sarkar, Subir Kumar

Author_Institution

Dept. of Electron. Sci., Calcutta Univ., Kolkata, India

Volume

4

fYear

2003

fDate

15-17 Oct. 2003

Firstpage

1308

Abstract

The effect of wave function modulation on the high frequency response of GaAs/AlAs quantum wells with several thin barrier layers being inserted inside the well is studied. Carrier scattering by longitudinal optic phonons, deformation potential acoustic phonons and background-ionized impurities are considered. The wave function modulation induced inside the quantum wells is found to reduce the intersubband scattering strength and considerably enhance the ac mobility normalized by the dc mobility. The variation of the normalized ac mobility with the frequency of the applied field is found to be fairly constant up to certain frequency beyond which it drops down.

Keywords

III-V semiconductors; carrier mobility; deformation; frequency response; impurity scattering; phonon-impurity interactions; quantum wells; wave functions; AlAs; GaAs; ac mobility; background-ionized impurities; carrier scattering; dc mobility; deformation potential acoustic phonons; high frequency response characteristics; intersubband scattering; longitudinal optic phonons; quantum wells; wave function modulation; Acoustic scattering; Frequency modulation; Frequency response; Gallium arsenide; Impurities; Optical modulation; Optical scattering; Particle scattering; Phonons; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2003. Conference on Convergent Technologies for the Asia-Pacific Region

Print_ISBN

0-7803-8162-9

Type

conf

DOI

10.1109/TENCON.2003.1273127

Filename

1273127