Title :
Single and Dual Gate GaAs FET Integrated Amplifiers in C Band
Author_Institution :
Plessey Avionics & Commun. Res. Lab., Romsey, UK
Abstract :
This paper outlines some aspects of the device characterisation, circuit design and realisation of hybrid integrated amplifiers in C Band. The performance of designs at 5 GHz employing single and dual-gate GaAs FETs are presented.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave amplifiers; C band; dual gate FET integrated amplifiers; frequency 5 GHz to 5.25 GHz; gain 20 dB; hybrid integrated amplifiers; single gate FET integrated amplifiers; Bonding; Capacitors; Ceramics; Circuit synthesis; Circuit topology; FETs; Gallium arsenide; Impedance; Noise figure; Testing;
Conference_Titel :
Microwave Symposium, 1972 IEEE GMTT International
Conference_Location :
Arlington Heights, IL
DOI :
10.1109/GMTT.1972.1123057
