Title :
Nonlinear optical devices in silicon
Author :
Jalali, B. ; Boyraz, O. ; Koonath, P. ; Raghunathan, V. ; Dimitropoulos, D. ; Indukuri, T.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
Abstract :
Nonlinear optical devices, with silicon-on-insulator material system as platform for their fabrication are discussed. Third order nonlinearity in silicon offers active functionalities in silicon by taking advantage of the high index contrast and tight beam confinement. Among the third order effects; Raman, Kerr nonlinearity, two-photon absorption are particularly strong
Keywords :
Raman spectra; optical Kerr effect; optical materials; silicon-on-insulator; two-photon processes; Kerr nonlinearity; Raman effect; silicon-on-insulator material system; third order nonlinearity; two-photon absorption; Nonlinear optical devices; Optical modulation; Optical refraction; Optical waveguides; Raman scattering; Scanning probe microscopy; Semiconductor waveguides; Silicon; Supercontinuum generation; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548128
