Title :
The impact of melting during reset operation on the reliability of phase change memory
Author :
Du, Pei-Ying ; Wu, Jau-Yi ; Hsu, Tzu-Hsuan ; Lee, Ming-Hsiu ; Wang, Tien-Yen ; Cheng, Huai-Yu ; Lai, Erh-Kun ; Lai, Sheng-Chih ; Lung, Hsiang-Lan ; Kim, SangBum ; BrightSky, Matthew J. ; Zhu, Yu ; Mittal, Surbhi ; Cheek, Roger ; Raoux, Simone ; Joseph, Er
Author_Institution :
Macronix Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan
Abstract :
Operation impact on endurance performance in GST-based phase change memory is investigated from small arrays to large test chips. SET operation induced electromigration and phase segregation are observed. For the first time, the RESET melting healing effect is proposed to partially repair the SET induced damage and further extend the endurance. This concept can be easily implemented by accordingly designing the control circuits.
Keywords :
arrays; circuit reliability; electromigration; melting; phase change memories; segregation; GST-based phase change memory; RESET melting healing effect; SET induced damage; SET operation; control circuits; electromigration; large test chips; operation impact; phase change memory reliability; phase segregation; reset operation; Conductivity; Electromigration; Maintenance engineering; Phase change materials; Phase change memory; Resistance; Tin; Endurance; RESET operation; electromigration; melting; phasechange memory (PCM); reliability; segregation;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241872
