Analysis of the effect of boron doping on GeTe Phase Change Memories

Author

Sandhya, C. ; Bastard, A. ; Perniola, L. ; Bastien, J.C. ; Toffoli, A. ; Henaff, E. ; Roule, A. ; Persico, A. ; Hyot, B. ; Sousa, V. ; De Salvo, B. ; Reimbold, G.

Author_Institution

CEA-LETI, Grenoble, France

fYear

2012

fDate

15-19 April 2012

Abstract

For the first time, we evaluate the electrical behavior of boron doped GeTe Phase-Change Memories (PCM). Our results demonstrate 25% RESET current reduction and excellent resistance contrast between SET and RESET states with B doping. A further benefit of controlled SET dynamics makes it favorable for MLC applications. Finally, we demonstrate that boron doped GeTe phase change materials maintain good device endurance reliability.

Keywords

germanium compounds; integrated circuit reliability; phase change materials; phase change memories; tellurium compounds; GeTeB; MLC applications; PCM; RESET states; controlled SET dynamics; current reduction; device endurance reliability; electrical behavior; phase change materials; phase change memories; resistance contrast; Boron; Crystallization; Doping; Phase change materials; Phase change memory; Resistance; Temperature measurement; Boron doping; Endurance; Growth dominated crystallization; MLC; Phase change memories; RESET; SET;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241873

Filename

6241873