• DocumentCode
    2635003
  • Title

    Field dependence of TDDB lifetime activation energy in copper interconnects

  • Author

    Achanta, Ravi

  • Author_Institution
    Syst. & Technol. Group, IBM, Hopewell Junction, NY, USA
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    We apply the charge transport model to simulate the TDDB lifetime activation energies (Ea,eV) in copper interconnects. The model very accurately predicts the available activation energy data, in actual interconnect test structures, over a wide range of electric fields. The importance of the induced dipole energy term in influencing breakdown is highlighted by the close match of the experiment and theory. The model can be applied to determine the reliable operating voltage for a given operating temperature.
  • Keywords
    copper; electric breakdown; electron transport theory; integrated circuit interconnections; integrated circuit metallisation; TDDB lifetime activation energy data; charge transport model; copper interconnects; electric field; field dependence; induced dipole energy term; interconnect test structure; operating temperature; Copper; Dielectrics; Electric breakdown; Equations; Ions; Mathematical model; Reliability; activation energy; copper interconnects; dielectric breakdown; field dependence; predictive model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241876
  • Filename
    6241876