DocumentCode
2635003
Title
Field dependence of TDDB lifetime activation energy in copper interconnects
Author
Achanta, Ravi
Author_Institution
Syst. & Technol. Group, IBM, Hopewell Junction, NY, USA
fYear
2012
fDate
15-19 April 2012
Abstract
We apply the charge transport model to simulate the TDDB lifetime activation energies (Ea,eV) in copper interconnects. The model very accurately predicts the available activation energy data, in actual interconnect test structures, over a wide range of electric fields. The importance of the induced dipole energy term in influencing breakdown is highlighted by the close match of the experiment and theory. The model can be applied to determine the reliable operating voltage for a given operating temperature.
Keywords
copper; electric breakdown; electron transport theory; integrated circuit interconnections; integrated circuit metallisation; TDDB lifetime activation energy data; charge transport model; copper interconnects; electric field; field dependence; induced dipole energy term; interconnect test structure; operating temperature; Copper; Dielectrics; Electric breakdown; Equations; Ions; Mathematical model; Reliability; activation energy; copper interconnects; dielectric breakdown; field dependence; predictive model;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4577-1678-2
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2012.6241876
Filename
6241876
Link To Document