Title :
Field dependence of TDDB lifetime activation energy in copper interconnects
Author_Institution :
Syst. & Technol. Group, IBM, Hopewell Junction, NY, USA
Abstract :
We apply the charge transport model to simulate the TDDB lifetime activation energies (Ea,eV) in copper interconnects. The model very accurately predicts the available activation energy data, in actual interconnect test structures, over a wide range of electric fields. The importance of the induced dipole energy term in influencing breakdown is highlighted by the close match of the experiment and theory. The model can be applied to determine the reliable operating voltage for a given operating temperature.
Keywords :
copper; electric breakdown; electron transport theory; integrated circuit interconnections; integrated circuit metallisation; TDDB lifetime activation energy data; charge transport model; copper interconnects; electric field; field dependence; induced dipole energy term; interconnect test structure; operating temperature; Copper; Dielectrics; Electric breakdown; Equations; Ions; Mathematical model; Reliability; activation energy; copper interconnects; dielectric breakdown; field dependence; predictive model;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241876