DocumentCode :
2635075
Title :
A Built-In Self-Repair Scheme for Multiport RAMs
Author :
Tseng, Tsu-Wei ; Wu, Chun-Hsien ; Huang, Yu-Jen ; Li, Jin-Fu ; Pao, Alex ; Chiu, Kevin ; Chen, Eliot
Author_Institution :
Dept. of Electr. Eng., National Central Univ., Jhongli
fYear :
2007
fDate :
6-10 May 2007
Firstpage :
355
Lastpage :
360
Abstract :
Built-in self-repair (BISR) techniques have been widely used for enhancing the yield of embedded memories. This paper presents an efficient BISR scheme for multiport RAMs (MPRAMs). The BISR scheme has a defect-location module (DLM) executing a defect-location algorithm to locate inter-port defects. This enhances the fault-location capability of the applied test algorithm with only a few amount of cost of testing time. A built-in redundancy analyzer (BIRA) executing a proposed redundancy analysis algorithm is also proposed to allocate two-dimension redundancy of MPRAMs. Experimental results show that if a faulty MPRAM has 20% inter-port faults, the DLM can boost the increment of repair rate from 8.4% to 14.4% for different redundancy configurations. The area cost of the BIRA and DLM is small, it is only about 1% for a 4096 times 128-bit MPRAM with 1 spare row and 1 spare IO.
Keywords :
built-in self test; fault simulation; integrated circuit technology; integrated circuit yield; random-access storage; redundancy; 2D redundancy; built-in redundancy analyzer; built-in self-repair scheme; defect-location algorithm; defect-location module; embedded memories; fault-location capability; multiport RAM; random access memories; redundancy analysis; Algorithm design and analysis; Built-in self-test; Cost function; Error correction codes; Hardware; Heuristic algorithms; NP-complete problem; Random access memory; Redundancy; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Test Symposium, 2007. 25th IEEE
Conference_Location :
Berkeley, CA
ISSN :
1093-0167
Print_ISBN :
0-7695-2812-0
Type :
conf
DOI :
10.1109/VTS.2007.4
Filename :
4209938
Link To Document :
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