Title :
An electro-mechanical simulation of off state AlGaN/GaN device degradation
Author :
Horton, David ; Ren, Fan ; Lu, Liu ; Law, Mark E.
Author_Institution :
Univ. of Florida, Gainesville, FL, USA
Abstract :
An electro-mechanical simulation of the degradation of AlGaN/GaN HEMT´s in the Off-state. Strain driven diffusion of impurities from the gate into the AlGaN layer increases trap density which leads to unrecoverable decreases in drain current.
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; drain current; electro-mechanical simulation; off state device degradation; strain driven diffusion; trap density; Aluminum gallium nitride; Gallium nitride; Impurities; Logic gates; Mathematical model; Nickel; Strain; AlGaN/GaN; Off-state; diffusion; inverse piezoelectric effect;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241880
