Title :
Patterned quantum dot lasers fabricated using electron beam lithography and selective area epitaxial growth
Author :
Elarde, V.C. ; Coleman, J.J. ; Bryce, A.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
This paper demonstrates a fabrication process which allows the location and geometry of quantum dots to be explicitly defined using electron beam lithography and selective area metal-organic chemical vapor deposition crystal growth. In this study, these fabrication processes are described and results are presented demonstrating significantly improved performance of laser devices containing a patterned quantum dot active layer.
Keywords :
MOCVD; electron beam lithography; quantum dot lasers; semiconductor epitaxial layers; crystal growth; electron beam lithography; metal-organic chemical vapor deposition; patterned quantum dot active layer; patterned quantum dot lasers; selective area epitaxial growth; Electron beams; Epitaxial growth; Gallium arsenide; Inductors; Lithography; Optical control; Optical device fabrication; Quantum dot lasers; Quantum dots; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548148