DocumentCode :
2635224
Title :
High Performance Bootstrapped CMOS Dual Supply Level Shifter for 0.5V Input and 1V Output
Author :
García, José C. ; Nelson, Juan A Montiel ; Nooshabadi, Saeid
Author_Institution :
Inst. for Appl. Microelectron., Univ. of Las Palmas de Gran Canaria, Las Palmas de Gran Canaria, Spain
fYear :
2009
fDate :
27-29 Aug. 2009
Firstpage :
311
Lastpage :
314
Abstract :
This paper presents the design of a highly area efficient bootstrapped CMOS level shifter (vj-level shifter). The proposed vj-level shifter uses a single bootstrap capacitor to minimise active area and to maintain the voltage difference between the gates of output pull-up PMOS and output pulldown NMOS transistors. When implemented on a 65 nm CMOS technology, under the large capacitive loading condition (2pF), vj-level shifter has a lower active area (93%), and energy-delay product (15%) than the reference level shifter circuit (ts-level shifter). Also vj-level shifter has very small effective input capacitance in comparison with ts-level shifter because the first does not need extra bootstrap capacitor connected with the input.
Keywords :
CMOS integrated circuits; MOSFET; bootstrap circuits; capacitance; capacitors; integrated circuit design; CMOS dual supply level shifter; bootstrap capacitor; capacitance 2 pF; capacitive loading; energy-delay product; input capacitance; output pull-down NMOS transistor; output pull-up PMOS transistor; ts-level shifter; vj-level shifter; voltage difference; CMOS technology; Capacitors; Circuit simulation; Delay; Design methodology; Digital systems; Energy consumption; Energy efficiency; Performance loss; Voltage; bootstrap capacitor; high capacitive load; level–shifter; low–energy; low–voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Digital System Design, Architectures, Methods and Tools, 2009. DSD '09. 12th Euromicro Conference on
Conference_Location :
Patras
Print_ISBN :
978-0-7695-3782-5
Type :
conf
DOI :
10.1109/DSD.2009.180
Filename :
5350059
Link To Document :
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