Title :
The influence of p-doping on the temperature sensitivity of 1.3 μm quantum dot lasers
Author :
Massé, N.F. ; Marko, I.P. ; Sweeney, S.J. ; Adams, A.R. ; Hatori, N. ; Sugarawa, M.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford, UK
Abstract :
We find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Along with carrier thermalisation effects, this is responsible for the temperature insensitive operation as observed around room temperature in these lasers.
Keywords :
quantum dot lasers; semiconductor doping; thermo-optical effects; 1.3 mum; 293 to 298 K; carrier thermalisation effects; nonradiative recombination; p-doping; quantum dot lasers; room temperature; temperature insensitive operation; temperature sensitivity; Fiber lasers; Laser theory; Optical devices; Quantum dot lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature dependence; Temperature sensors; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548150
