Title :
size and density control of InAs quantum dots by selective MOVPE growth employing stripe mask array and composition-varied GaInAs layer
Author :
Yamauchi, Y. ; Kawakita, Y. ; Okamoto, S. ; Yoshida, J. ; Shimomura, K.
Author_Institution :
Sophia Univ., Tokyo
Abstract :
Selective MOVPE growth of self-assembled InAs quantum dots (QDs) using a SiO2 narrow stripe mask array and composition-varied GaInAs layers successfully yielded a variation of size across the array while keeping density
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; masks; self-assembly; semiconductor growth; semiconductor quantum dots; silicon compounds; vapour phase epitaxial growth; GaInAs; GaInAs layer; InAs; InAs quantum dots; SiO2; density control; selective MOVPE; self-assembly; size control; stripe mask array; Buffer layers; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical devices; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Size control; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548154
