Title :
Power Amplification at 55-65 GHz with 18 GHz Gain-Bandwidth Product
Abstract :
A high efficiency silicon avalanche diode power amplifier with 100-200 mW output power is described. Typical single stage gain of 20-22 dB with bandwidths exceeding 1 GHz has been achieved in production quantities. Best performance showed an 18 GHz voltage gain-bandwidth product.
Keywords :
Bandwidth; Broadband amplifiers; Circuit optimization; Diodes; Gain; Power amplifiers; RLC circuits; Tuned circuits; Voltage; Wideband;
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
DOI :
10.1109/GMTT.1973.1123091
