Title :
The case study of poly-silicon grain size and resistance
Author_Institution :
United Microelectron. Corp., Ltd., Tainan, Taiwan
Abstract :
The grain size and sheet resistance relationship is discussed in this paper for high resistance failure analysis case study. In this case, the bad die resistance is much higher than that of the good die. After OBIRCH localization of the defect, different grain sizes were observed between good and bad dice by X-S and P-V TEM respectively at the hot spot site. From some papers studying, the inverse relationship between the resistance and the grain size of different material is revealed, and it also can de demonstrated in the case study.
Keywords :
crystal defects; electric resistance; elemental semiconductors; failure analysis; grain size; polymers; silicon; transmission electron microscopy; OBIRCH defect localization; P-V TEM; X-S TEM; bad die resistance; good die; high resistance failure analysis case study; hot spot site; inverse relationship; poly-silicon grain size; sheet resistance relationship; Films; Grain boundaries; Grain size; Resistance; Scattering; Silicon;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241902
