Light emission from rare earth lumophores in inorganic and organic hosts

Author

Steck, A.J.

Author_Institution

Cincinnati Univ., OH, USA

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

652

Lastpage

653

Abstract

This paper presents a review on the properties of rare earth (RE) lumophores incorporated in selected inorganic hosts and secondarily in organic materials. The main RE lumophore-host combination discussed involves the use of the wide bandgap semiconductor GaN and related family of III-N (AlN/GaN/InN) compounds and alloys. The relationship between the fabrication technique, material properties and related light emitting device characteristics are also described.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; impurity absorption spectra; indium compounds; light emitting devices; organic compounds; photoluminescence; wide band gap semiconductors; GaN-AlN-GaN-InN; III-N alloys; III-N compounds; fabrication technique; inorganic hosts; light emission; light emitting device; lumophore-host combination; material properties; organic hosts; rare earth lumophores; wide bandgap semiconductor; Crystalline materials; Doping; Flat panel displays; Gallium nitride; Inorganic materials; Optical materials; Organic materials; Photonic band gap; Stimulated emission; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548174

Filename

1548174