Title :
Effects of gate process on NBTI characteristics of TiN gate FinFET
Author :
Kim, Jin Ju ; Cho, Moonju ; Pantisano, Luigi ; Chiarella, Thomas ; Togo, Mitsuhiro ; Horiguchi, Naoto ; Groeseneken, Guido ; Lee, Byoung Hun
Author_Institution :
Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
NBTI characteristics of p-FinFET with TiN metal gates deposited by ALD or PVD method have been investigated in detail. NBTI lifetime of ALD-TiN gate device was better than that of PVD TiN gate device. The differences were primarily attributed to the differences in the thickness and quality of interfacial SiO2 layer which was affected by an oxygen scavenging reaction of TiN layer. Also, NBTI characteristics were degraded at narrower FinFET in both ALD and PVD devices as the contribution from sidewall (110) region increased.
Keywords :
MOSFET; atomic layer deposition; semiconductor device reliability; silicon compounds; titanium compounds; ALD gate device; NBTI characteristics; PVD method; SiO2; TiN; atomic layer deposition; gate process; metal gate FinFET; oxygen scavenging reaction; p-FinFET; Electrodes; FinFETs; Logic gates; Stress; Threshold voltage; Tin; ALD; FinFET; NBTI; PVD; TiN;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241913
