• DocumentCode
    2635771
  • Title

    Effect of interface states on 1T-FBRAM cell retention

  • Author

    Aoulaiche, M. ; Collaert, N. ; Blomme, P. ; Simoen, E. ; Altimime, L. ; Groeseneken, G. ; Jurczak, M. ; Almeida, L. Mendes ; Caillat, Ch ; Mahatme, N.N.

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2012
  • fDate
    15-19 April 2012
  • Abstract
    In this work, the retention of 1T-RAM UTBOX SOI devices is investigated. It is found that the interface defects at 0.3eV below the Si conduction band are responsible for the short retention times. The measured retention time and kinetics are reproduced by a model assuming hole generation via interface states.
  • Keywords
    conduction bands; elemental semiconductors; interface states; random-access storage; silicon; silicon-on-insulator; time measurement; 1T-FBRAM cell retention; 1T-RAM UTBOX SOI devices; Si; conduction band; electron volt energy 0.3 eV; floating body RAM; hole generation; interface defects; interface states effect; retention time measurement; ultra thin buried oxide devices; Current measurement; Energy states; Interface states; Mathematical model; Silicon; Temperature measurement; Time measurement; 1T-RAM; SOI; UTBOX; floating body RAM; interface state; retention;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2012 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4577-1678-2
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2012.6241918
  • Filename
    6241918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2635771