Title :
Current overshoot during set and reset operations of resistive switching memories
Author_Institution :
Strategic Technol. Group, GLOBALFOUNDRIES, Sunnyvale, CA, USA
Abstract :
Low switching current is required for low-power operation of resistive switching memories. Current overshoot during set switching is caused by parasitic capacitance, which may be minimized by effective switching control and reduction of parasitic effects. A different form of current overshoot is also observed during reset switching, where devices go through a transient resistance-reduction process before the reset switching occurs. Reset current overshoot increases actual reset power. Current overshoot has significant impact on the reliability and switching power of resistive switching memories.
Keywords :
integrated circuit reliability; random-access storage; switching circuits; transient analysis; RRAM; low switching current; parasitic capacitance; parasitic effect reduction; reliability; reset current overshoot; reset operations; resistive switching memories; set operations; set switching; switching control; transient resistance-reduction process; Parasitic capacitance; Resistance; Resistors; Switches; Switching circuits; Transient analysis; Transistors; RRAM; current overshoot; parasitics;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2012.6241919