DocumentCode :
2635857
Title :
Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect
Author :
Lu, Y. ; Chen, B. ; Gao, B. ; Fang, Z. ; Fu, Y.H. ; Yang, J.Q. ; Liu, L.F. ; Liu, X.Y. ; Yu, H.Y. ; Kang, J.F.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2012
fDate :
15-19 April 2012
Abstract :
We report that the endurance degradation behaviors of transitional metal oxide (TMO) based resistive random access memory (RRAM) is dominated by three different steps and correlated with extra oxygen vacancy accumulation during SET/RESET switching process. The physical origin of endurance degradation due to the pulse voltage effect is verified by the measured data. The optimized operation schemes are accordingly proposed and implemented to enhance the endurance behavior. More than 108 switching cycles are achieved in the TiN/HfOx/TiOx structured devices.
Keywords :
hafnium compounds; oxygen; random-access storage; titanium compounds; RRAM; SET RESET switching process; TiN-HfO-TiO; endurance degradation; oxide based resistive switching memory devices; oxygen vacancy accumulation effect; pulse voltage effect; resistive random access memory; transitional metal oxide; Degradation; Educational institutions; Hafnium compounds; Pulse measurements; Switches; Tin; Voltage measurement; RRAM; conductive filament; endurance; hafnium oxide; nonvolatile memory; oxygen vacancy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2012.6241921
Filename :
6241921
Link To Document :
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