DocumentCode :
2636091
Title :
Evidence for Pb center-hydrogen complexes after subjecting PMOS devices to NBTI stress - A combined DCIV/SDR study
Author :
Aichinger, Thomas ; Lenahan, Patrick M. ; Grasser, Tibor ; Pobegen, Gregor ; Nelhiebel, Michael
Author_Institution :
Semicond. Spectrosc. Lab., Pennsylvania State Univ., State College, PA, USA
fYear :
2012
fDate :
15-19 April 2012
Abstract :
We study deep level defects at the Si/SiO2 interface of 30nm and 5nm SiO2 PMOS devices after negative bias temperature stress (NBTS). Electrical characterization using the direct-current current-voltage (DCIV) technique reveals two defects with different energy levels, recovery and degradation dynamics. To investigate their micro-physical nature, we perform spin dependent recombination (SDR). Besides conventional Pb centers we also find evidence for Pb center-hydrogen complexes.
Keywords :
MOSFET; deep levels; silicon; silicon compounds; DCIV-SDR method; NBTI stress; Pb center-hydrogen complex; PMOS devices; Si-SiO2; deep level defect; degradation dynamics; direct-current current-voltage technique; electrical characterization; energy level; negative bias temperature stress; recovery dynamics; spin dependent recombination; Current measurement; Hydrogen; Lead; Logic gates; Performance evaluation; Stress; Temperature measurement; NBTI; Pb center; Spin dependent recombination; hydrogen;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2012 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4577-1678-2
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2012.6241932
Filename :
6241932
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2636091
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