Evidence for Pb center-hydrogen complexes after subjecting PMOS devices to NBTI stress - A combined DCIV/SDR study

Author

Aichinger, Thomas ; Lenahan, Patrick M. ; Grasser, Tibor ; Pobegen, Gregor ; Nelhiebel, Michael

Author_Institution

Semicond. Spectrosc. Lab., Pennsylvania State Univ., State College, PA, USA

fYear

2012

fDate

15-19 April 2012

Abstract

We study deep level defects at the Si/SiO₂ interface of 30nm and 5nm SiO₂ PMOS devices after negative bias temperature stress (NBTS). Electrical characterization using the direct-current current-voltage (DCIV) technique reveals two defects with different energy levels, recovery and degradation dynamics. To investigate their micro-physical nature, we perform spin dependent recombination (SDR). Besides conventional P_b centers we also find evidence for P_b center-hydrogen complexes.

Keywords

MOSFET; deep levels; silicon; silicon compounds; DCIV-SDR method; NBTI stress; P_b center-hydrogen complex; PMOS devices; Si-SiO₂; deep level defect; degradation dynamics; direct-current current-voltage technique; electrical characterization; energy level; negative bias temperature stress; recovery dynamics; spin dependent recombination; Current measurement; Hydrogen; Lead; Logic gates; Performance evaluation; Stress; Temperature measurement; NBTI; Pb center; Spin dependent recombination; hydrogen;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241932

Filename

6241932