DocumentCode :
2636205
Title :
Recent progress in nitride-based UV light emitters
Author :
Kamiyama, Satoshi ; Iwaya, Motoaki ; Amano, Hiroshi ; Akasaki, Isamu
Author_Institution :
Fac. of Sci. & Technol., Meijo Univ., Nagoya, Japan
fYear :
2005
fDate :
22-28 Oct. 2005
Firstpage :
724
Lastpage :
725
Abstract :
Nitride-based UV light emitters are recently improved by the progress of crystal growth technologies of AlGaN-based heterostructure. By applying hetero-epitaxial lateral overgrowth (HELO) technique, a high performance UV-LED and a short lasing-wavelength UV-LD have been demonstrated. The UV-LED is also applicable to visible emitters in a combination with wavelength converter. A yellowish white LED with B and N doped SiC substrate was demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium compounds; light emitting diodes; optical wavelength conversion; semiconductor growth; semiconductor lasers; AlGaN; AlGaN-based heterostructure; B doped SiC substrate; N doped SiC substrate; SiC:B; SiC:N; UV light emitters; UV-LED; crystal growth technologies; heteroepitaxial lateral overgrowth; nitride-based light emitters; short lasing-wavelength UV-LD; visible emitters; wavelength converter; yellowish white LED; Aluminum gallium nitride; Electronic mail; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Semiconductor diodes; Silicon carbide; Substrates; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
Type :
conf
DOI :
10.1109/LEOS.2005.1548211
Filename :
1548211
Link To Document :
بازگشت